MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM02CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Osnovni podaci:
Oznaka proizvođača | MSCSM120AM042CT6LIAG |
Type of casing: | MODUL |
Case: | !_modul-t6li_! |
Kategorie | Full SiC (MOS+D) |
Vrsta komponente: | !_n-mosfet_! |
Konfiguracija: | !_half bridge_! |
Vrsta materijala: | !_sic full_! |
Material Base | Cu |
RoHS | Da |
REACH | Da |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Pakiranje i težina:
Jedinica: | kom |
Težina: | 320 [g] |
Tip ambalaže: | BOX |
Mali paket (Broj jedinica): | 6 |
Elektrofizički parametri:
Udc (URRM, UCEO, Umax) | 1200 [V] |
Idc max (Tc/Ta=25÷160°C) | 495 [A] |
Idc max (Tc/Ta=25°C) | 495 [A] |
Idc max (Tc/Ta=80÷89°C) | 395 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] |
IR (reverse current) | 1200 [µA] |
Pd -s chladičem (Tc=25°C) | 2031 [W] |
Input Logic Level (Ugs level) | 20V |
Rds(on) 10V (Ugs=10V) | 5.2 [mΩ] |
trr recovery time (If=Inom.,@25°C) | 90 [ns] |
tr (Turn-on / rise time) | 55 [ns] |
tf (turn-off=fall time) | 67 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
Qg (Total Gate Charge) | 1392 [nC] |
Cin/CL Load Capacitance | 18100 pF |
Toplinske i mehaničke parametre:
Tmin (minimalna radna temperatura) | -40 [°C] |
Tmax (maksimalna radna temperatura) | 175 [°C] |
Rthjc (case) | 0.075 [°C/W] |
Rthjc1 IGBT | 0.074 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
PIN dimenzije | 0.00 [mm] |