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MSCSM120AM03CT6LIAG
MOSFET 1200V Full SiC MOS + SiC Diode
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| ID Code: | 185252 |
| Proizvođač: | Microchip Technology |
| Cijena s PDV-om : | 1 805,3426 € |
| Cijena bez PDV-a : | 1 492,0186 € |
| VAT: | 21 % |
| Raspoloživost: | na zahtjev |
| Ukupno dionica: | 0 kom |
| Oznaka proizvođača: | MSCSM120AM03CT6LIAG |
| Centralno skladište Zdice: | 0 kom |
| Vanjsko skladište (isporuka 5÷10 dana): | 0 kom |
| Jedinica:: | kom |
| !_prehled mnozstevnich slev_! | Količina | Cijena bez PDV-a | Cijena s PDV-om | |
| 1 + | 1 492,0186 € | 1 805,3426 € | ||
| 5 + | 1 429,8525 € | 1 730,1215 € | ||
| 10 + | 1 367,6846 € | 1 654,8984 € | ||
| 25 + | 1 305,5172 € | 1 579,6758 € |
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM03CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Osnovni podaci:
| Oznaka proizvođača | MSCSM120AM03CT6LIAG |
| Kategorie | Full SiC (MOS-BD+D) |
| Vrsta komponente: | SiC MOSFET-BD+SiC Schottky D |
| Konfiguracija: | Half Bridge 1*(Phase Leg) |
| Specifikacija: | !_sic n-channel mosfet_! |
| Konstrukcija: | 2*FET-BD+2*D |
| Vrsta materijala: | !_sic full_! |
| RoHS | Da |
| REACH | Ne |
| Type of casing: | MODUL |
| Case: | !_sp6li_! |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Pakiranje i težina:
| Jedinica: | kom |
| Težina: | 350 [g] |
| Tip ambalaže: | BOX |
| Mali paket (Broj jedinica): | 6 |
Elektrofizički parametri:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 805 [A] |
| Idc max (Tc/Ta=25°C) | 805 [A] |
| Idc max (Tc/Ta=80÷89°C) | 640 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 1200 [µA] |
| Pd -s chladičem (Tc=25°C) | 3215 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 3.1 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Qg (Total Gate Charge) | 2320 [nC] |
| Cin/CL Load Capacitance | 30200 pF |
Toplinske i mehaničke parametre:
| Tmin (minimalna radna temperatura) | -40 [°C] |
| Tmax (maksimalna radna temperatura) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.047 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.126 [°C/W] |
| W - Širina | 62 [mm] |
| L - Dužina | 108 [mm] |
| H - Visina | 22 [mm] |
| Rozměry/Velikost (LxWxH) | 108x62x22 [mm] |
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