MOSFET 1200V Full SiC without SiC diodes Phase Leg SiC
The following are the features of
. SiC Power MOSFET
. Low RDS(on)
. High temperature performance
. Temperature-independent switching behavior
. Kelvin Emitor for easy drive
. High level of integration
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
Benefits: High efficiency converter, Stable temperature behavior, Direct mounting to heatsink (isolated package), Low junction to case thermal resistance, RoHS Compliant
Application: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, EV motor and traction drive
Osnovni podaci:
Oznaka proizvođača | MSCSM120AM036D3AG |
Type of casing: | MODUL |
Case: | SEMITRANS-3 |
Kategorie | Full SiC (MOS) |
Vrsta komponente: | !_n-mosfet_! |
Konfiguracija: | !_half bridge_! |
Vrsta materijala: | !_sic full_! |
Material Base | Cu |
RoHS | Da |
REACH | Da |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Pakiranje i težina:
Jedinica: | kom |
Težina: | 350 [g] |
Tip ambalaže: | BOX |
Mali paket (Broj jedinica): | 6 |
Elektrofizički parametri:
Udc (URRM, UCEO, Umax) | 1200 [V] |
Idc max (Tc/Ta=25÷160°C) | 460 [A] |
Idc max (Tc/Ta=80÷89°C) | 460 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
Pd -s chladičem (Tc=25°C) | 2031 [W] |
Input Logic Level (Ugs level) | 20V |
Rds(on) 10V (Ugs=10V) | 3.6 [mΩ] |
tr (Turn-on / rise time) | 55 [ns] |
tf (turn-off=fall time) | 67 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
Qg (Total Gate Charge) | 1392 [nC] |
Cin/CL Load Capacitance | 18100 pF |
Toplinske i mehaničke parametre:
Tmin (minimalna radna temperatura) | -40 [°C] |
Tmax (maksimalna radna temperatura) | 175 [°C] |
Rthjc (case) | 0.075 [°C/W] |
Rthjc1 IGBT | 0.074 [°C/W] |
PIN dimenzije | 0.00 [mm] |
Alternative i zamjena
Alternativa 1: | 176372 - CAS300M12BM2 (WO) |
Alternativa 2: | 173619 - SKM500MB120SC (SMK) |
Alternativni proizvodi 1: | MD400HFR120C2S |
Alternativni proizvodi 2: | FF3MR12KM1 |
Alternativni proizvodi 3: | FF2MR12KM1 |