IGBT Module 3300V/125A Half Bridge, AlSiC, Chip technology Soft Punch Through Silicon and high current density enhanced DMOS.
Osnovni podaci:
Oznaka proizvođača | DIM125PHM33-TS000 |
Type of casing: | MODUL |
Case: | MODUL - P |
Kategorie | IGBT Full Silicon |
Konfiguracija: | !_half bridge_! |
Vrsta materijala: | !_si-silicon_! |
Material Base | ALSiC |
RoHS | Da |
REACH | Ne |
NOVINKA | A |
RoHS1 | Ano |
Pakiranje i težina:
Jedinica: | kom |
Težina: | 500 [g] |
Tip ambalaže: | BOX |
Mali paket (Broj jedinica): | 4 |
Elektrofizički parametri:
Udc (URRM, UCEO, Umax) | 3300 [V] |
Idc max (Tc/Ta=25÷160°C) | 125 [A] |
IF(AV) (Tc/Ta=100÷119°C) | 125 [A] |
Uisol (@25°C/1min/50Hz) | 6000 [V] |
UF (maximum forward voltage) | 2.5 [VDC] |
UCE (sat) (@25°C) | 2.2 [V] |
I2t (TC/TA=25°C) | 5 [1000*A2s] |
Pd -s chladičem (Tc=25°C) | 1300 [W] |
Esw (125°C) | 1200 [mJ] |
Input Logic Level (Ugs level) | 20V |
tr (Turn-on / rise time) | 520 [ns] |
tf (turn-off=fall time) | 610 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.001 [MHz] |
Qg (Total Gate Charge) | 2500 [nC] |
Cin/CL Load Capacitance | 22500 pF |
Toplinske i mehaničke parametre:
Tmin (minimalna radna temperatura) | -40 [°C] |
Tmax (maksimalna radna temperatura) | 150 [°C] |
Rthjc (case) | 0.096 [°C/W] |
PIN dimenzije | 0.00 [mm] |