IGBT 650V H-Bridge • High speed Trench + Field Stop IGBT 4 Technology
Osnovni podaci:
Oznaka proizvođača | APTGLQ300H65G |
Type of casing: | MODUL |
Case: | !_modul-sp6c_! |
Kategorie | IGBT Full Silicon |
Konfiguracija: | !_full bridge_! |
Vrsta materijala: | !_si-silicon_! |
RoHS | Da |
REACH | Ne |
NOVINKA | A |
RoHS1 | Ano |
Pakiranje i težina:
Jedinica: | kom |
Težina: | 300 [g] |
Tip ambalaže: | BOX |
Mali paket (Broj jedinica): | 2 |
Elektrofizički parametri:
Udc (URRM, UCEO, Umax) | 650 [V] |
Idc max (Tc/Ta=25÷160°C) | 385 [A] |
Idc max (Tc/Ta=25°C) | 385 [A] |
Idc max (Tc/Ta=60÷69°C) | 300 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 2 [VDC] |
UCE (sat) (@25°C) | 2.3 [V] |
Pd -s chladičem (Tc=25°C) | 1000 [W] |
Input Logic Level (Ugs level) | 20V |
trr recovery time (If=Inom.,@25°C) | 125 [ns] |
tr (Turn-on / rise time) | 33 [ns] |
tf (turn-off=fall time) | 21 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.03 [MHz] |
Qg (Total Gate Charge) | 1750 [nC] |
Cin/CL Load Capacitance | 18300 pF |
Toplinske i mehaničke parametre:
Tmin (minimalna radna temperatura) | -40 [°C] |
Tmax (maksimalna radna temperatura) | 175 [°C] |
Rthjc1 IGBT | 0.15 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.26 [°C/W] |
PIN dimenzije | 0.00 [mm] |